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PDF C5243 Data sheet ( Hoja de datos )
| Número de pieza | C5243 | |
| Descripción | NPN Transistor - 2SC5243 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
www.DataSheet4U.comPeak base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
IC
ICP*
IBP
PC
1700
1700
6
15
30
10
200
3.5
Junction temperature
Storage temperature
*Non-repetitive peak
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A,
Resistance loaded
min typ max Unit
1 µA
50 µA
5 12
3V
1.5 V
3 MHz
1.5 2.5 µs
0.12 0.2
µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C5243.PDF ] | |
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