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Número de pieza | APTM50UM25S | |
Descripción | MOSFET Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM50UM25S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTM50UM25S
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 25mΩ max @ Tj = 25°C
ID = 149A @ Tc = 25°C
SK
S
G
www.DataSheet4U.com
CR1
Q1
Application
D
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Low stray inductance
- M6 power connectors
- M4 signal connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
149
110
550
±30
25
1250
41
50
1600
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
100
Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50UM25S
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=74.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
limited by RDSon
100µs
100
limited by RDSon
1ms
10 10ms
Single pulse
TJ=150°C
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=149A
TJ=25°C
VDS=100V
VDS=250V
10
8 VDS=400V
6
4
2
0
0 80 160 240 320 400 480 560
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTM50UM25S.PDF ] |
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APTM50UM25S | MOSFET Power Module | Advanced Power Technology |
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