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Número de pieza | APTM50HM75STG | |
Descripción | MOSFET Power Module | |
Fabricantes | MicroSemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM50HM75STG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTM50HM75STG
Full bridge
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 75mΩ typ @ Tj = 25°C
ID = 46A @ Tc = 25°C
G1
S1
G2
S2
NTC1
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VB US
CR1A
CR3A
Q1 CR1B CR3B
Q3
CR2A
O UT1 O UT2
CR4A
Q2 CR2B CR4B
Q4
0/V BUS
G3
S3
G4
S4
NTC2
G3
S3
VBUS
S1
G1
G4
S4
0/VB US
S2
G2
OUT2
OUT1
NTC2
NTC1
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
46
34
184
±30
90
357
46
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50HM75STG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=23A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limiltimeditbeyd RbyDSRonDSon
100µs
10
1
1
Single pulse
TJ=150°C
TC=25°C
1ms
10ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=46A
TJ=25°C
VDS=100V
VDS=250V
10
8 VDS=400V
6
4
2
0
0 20 40 60 80 100 120 140 160
Gate Charge (nC)
www.microsemi.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTM50HM75STG.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTM50HM75STG | MOSFET Power Module | Advanced Power Technology |
APTM50HM75STG | MOSFET Power Module | MicroSemi |
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