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Número de pieza | APTM20UM09S | |
Descripción | MOSFET Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTM20UM09S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! APTM20UM09S
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 200V
RDSon = 9mΩ max @ Tj = 25°C
ID = 195A @ Tc = 25°C
SK
S
G
www.DataSheet4U.com
CR1
Q1
Application
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
195
145
780
±30
9
780
65
30
1300
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
1 page APTM20UM09S
Typical Performance Curve
0.18
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.9
0.12 0.7
0.1
0.08
0.5
0.06 0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Low Voltage Output Characteristics
600
500
400
VGS=15 & 10V
8V
300
200 7V
100
6V
0
0 2.5 5 7.5 10 12.5
VDS, Drain to Source Voltage (V)
15
Transfert Characteristics
600
VDS > ID(on)xRDS(on)MAX
500 250µs pulse test @ < 0.5 duty cycle
400
300
200
100
0
2
TJ=125°C
TJ=25°C
TJ=-55°C
3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
1.2
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 74.5A
1.1
1.05
VGS=10V
1
0.95
0.9
0
VGS=20V
100 200 300
ID, Drain Current (A)
400
DC Drain Current vs Case Temperature
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
5–7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet APTM20UM09S.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTM20UM09S | MOSFET Power Module | Advanced Power Technology |
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