Datenblatt-pdf.com


GPA806 Schematic ( PDF Datasheet ) - Taiwan Semiconductor

Teilenummer GPA806
Beschreibung (GPA801 - GPA807) Glass Passivated Rectifiers
Hersteller Taiwan Semiconductor
Logo Taiwan Semiconductor Logo 




Gesamt 2 Seiten
GPA806 Datasheet, Funktion
GPA801 THRU GPA807
8.0 AMPS. Glass Passivated Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
.113(2.87)
.103(2.62)
TO-220A
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
Mechanical Data
Cases: TO-220A molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
www.DataSheet4U.com
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GPA GPA
801 802
GPA
803
GPA
804
GPA
805
GPA
806
GPA Units
807
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
I(AV)
8.0
A
@TC = 100
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@8.0A
VF
1.1 V
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage
Typical Junction Capacitance ( Note 1)
IR
Cj
5.0 uA
50 pF
Typical Thermal Resistance (Note 2)
RθJC
2.5 /W
Operating and Storage Temperature Range TJ ,TSTG
- 65 to + 150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Case Mounted on Heatsink size 2” x 3” x 0.25”
Al-Plate
- 546 -





SeitenGesamt 2 Seiten
PDF Download[ GPA806 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GPA801(GPA801 - GPA807) Glass Passivated RectifiersTaiwan Semiconductor
Taiwan Semiconductor
GPA802(GPA801 - GPA807) Glass Passivated RectifiersTaiwan Semiconductor
Taiwan Semiconductor
GPA803(GPA801 - GPA807) Glass Passivated RectifiersTaiwan Semiconductor
Taiwan Semiconductor
GPA804(GPA801 - GPA807) Glass Passivated RectifiersTaiwan Semiconductor
Taiwan Semiconductor
GPA805(GPA801 - GPA807) Glass Passivated RectifiersTaiwan Semiconductor
Taiwan Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche