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PESD5V0L7BS Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PESD5V0L7BS
Beschreibung Low capacitance 7-fold bidirectional ESD protection diode arrays
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 14 Seiten
PESD5V0L7BS Datasheet, Funktion
PESD5V0L7BAS;
PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode
arrays
Rev. 02 — 25 November 2004
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
packages designed for the protection of up to seven transmission or data lines from
damage caused by ElectroStatic Discharge (ESD) and other transients.
Table 1: Product overview
Type number
Package
Name
PESD5V0L7BAS
TSSOP8
PESD5V0L7BS
SO8
Philips
SOT505-1
SOT96-1
1.2 Features
s ESD protection of up to seven lines
s Low diode capacitance
s Max. peak pulse power: Ppp = 35 W
s Low clamping voltage: V(CL)R = 17 V
1.3 Applications
s Computers and peripherals
s Communication systems
s Audio and video equipment
s Ultra low leakage current: IRM = 3 nA
s ESD protection of up to 10 kV
s IEC 61000-4-2, level 4 (ESD)
s IEC 61000-4-5 (surge); Ipp = 2.5 A.
s High speed data lines
s Parallel ports.
1.4 Quick reference data
Table 2:
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
Min Typ Max Unit
- - 5V
- 8 10 pF






PESD5V0L7BS Datasheet, Funktion
Philips Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
102
Ppp
(W)
10
001aaa192
1.2
Ppp
Ppp(25˚C)
0.8
0.4
001aaa193
1
1 10 102 103 104
tp (µs)
Tamb = 25 °C.
Fig 3. Peak pulse power as a function of exponential
pulse duration tp; typical values.
0
0 50 100 150 200
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
www.DataSheet4U.com
9
Cd
(pF)
8
001aaa142
10
IRM
IRM(25°C)
001aaa143
1
7
6
012345
VR (V)
Tamb = 25 °C; f = 1 MHz.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
0
100
50
0
50 100 150
Tj (°C)
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values.
9397 750 13705
Product data sheet
Rev. 02 — 25 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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6 Page









PESD5V0L7BS pdf, datenblatt
Philips Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
10. Revision history
Table 11: Revision history
Document ID
Release date Data sheet status Change notice Doc. number Supersedes
PESD5V0L7BAS_BS_2 20041125
Product data sheet -
9397 750 13705 PESD5V0L7BS_1
Modifications:
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
PESD5V0L7BAS added
Table 1: product overview added
Section 9 Packing information added
PESD5V0L7BS_1
20040315
Product specification -
9397 750 12249 -
www.DataSheet4U.com
9397 750 13705
Product data sheet
Rev. 02 — 25 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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