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Teilenummer | PESD5V0L5UY |
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Beschreibung | (PESD3V3L5UY / PESD5V0L5UY) Low capacitance 5-fold ESD protection diode arrays | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 11 Seiten DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
www.DataSheet4U.com
PESD3V3L5UY; PESD5V0L5UY
Low capacitance 5-fold ESD
protection diode arrays in SOT363
package
Product specification
2004 Mar 23
Philips Semiconductors
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
Product specification
PESD3V3L5UY;
PESD5V0L5UY
GRAPHICAL DATA
102
Ppp
(W)
10
001aaa208
1
1 10 102 103 104
tp (µs)
Tamb = 25 °C.
Ipp = 8/20 µs exponentially decaying waveform; see Fig.2.
Fig.4 Peak pulse power dissipation as a function
www.DataSheet4U.com
of pulse time; typical values.
Ppp(Tj)
Ppp(Tj = 25°C)
1.0
0.8
0.6
0.4
0.2
0
0
001aaa209
50 100 150
Tj (°C)
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
25
Cd
(pF)
20
001aaa210
15
(1)
(2)
10
5
0
012345
VR (V)
(1) PESD3V3L5UY.
(2) PESD5V0L5UY.
f = 1 MHz; Tamb = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
10
IR(Tj)
IR(Tj = 25°C)
1
001aaa211
10−1
−75
−25
25
75 125 175
Tj (°C)
Fig.7 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
2004 Mar 23
6
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ PESD5V0L5UY Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PESD5V0L5UF | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD5V0L5UK | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD5V0L5UV | (PESD3V3L5UV / PESD5V0L5UV) Low capacitance 5-fold ESD protection diode arrays | NXP Semiconductors |
PESD5V0L5UV | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD5V0L5UY | (PESD3V3L5UY / PESD5V0L5UY) Low capacitance 5-fold ESD protection diode arrays | NXP Semiconductors |
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