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PDF W3EG6432S-D4 Data sheet ( Hoja de datos )
| Número de pieza | W3EG6432S-D4 | |
| Descripción | 32Mx64 DDR SDRAM UNBUFFERED | |
| Fabricantes | White Electronic | |
| Logotipo |  |
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White Electronic Designs
W3EG6432S-D4
PRELIMINARY*
256MB – 32Mx64 DDR SDRAM UNBUFFERED
FEATURES
DDR200, DDR266 and DDR333
• JEDEC design specifications
Double-data-rate architecture
Industrial temperature
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Power supply: 2.5V ± 0.20V
Industrial temperature options
www.DataSheet4U.com
Standard 200 pin SO-DIMM package
• Package height option:
D4: 31.75mm (1.25")
DESCRIPTION
The W3EG6432S is a 32Mx64 Double Data Rate
SDRAM memory module based on 256Mb DDR SDRAM
components. The module consists of eight 32Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 200
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
NOTE: Consult factory for availability of:
• Lead-free products
• Vendor source control option
• Industrial temperature option
Clock Speed
CL-tRCD-tRP
DDR333 @CL=2.5
166MHz
2.5-3-3
OPERATING FREQUENCIES
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-3-3
DDR200 @CL=2
100MHz
2-2-2
December 2004
Rev. 6
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 page  
White Electronic Designs
W3EG6432S-D4
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V
DDR SDRAM Component Values Only
Parameter
Symbol Conditions
Operating Current
Operating Current
Precharge Power-
Down Standby
Current
Idle Standby
Current
Active Power-Down
Standby Current
Active Standby
Current
Operating Current
Operating Current
Auto Refresh
Current
Self Refresh
Current
Operating Current
One device bank; Active - Precharge;
tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM and DQS
IDD0 inputs changing once per clock cycle; Address
and control inputs changing once every two
cycles.
One device bank; Active-Read-Precharge;
IDD1
Burst = 2; tRC=tRC(MIN);tCK=tCK(MIN); Iout =
0mA; Address and control inputs changing
once per clock cycle.
IDD2P
All device banks idle; Power- down mode;
tCK=tCK(MIN); CKE=(low)
CS# = High; All device banks idle;
IDD2F
tCK=tCK(MIN); CKE = high; Address and other
control inputs changing once per clock cycle.
Vin = Vref for DQ, DQS and DM.
IDD3P
One device bank active; Power-down mode;
tCK(MIN); CKE=(low)
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS(MAX);
IDD3N
tCK=tCK(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address and
other control inputs changing once per clock
cycle.
Burst = 2; Reads; Continous burst; One
IDD4R
device bank active;Address and control inputs
changing once per clock cycle; tCK=tCK(MIN);
Iout = 0mA.
Burst = 2; Writes; Continous burst; One
device bank active; Address and control inputs
IDD4W changing once per clock cycle; tCK=tCK(MIN);
DQ,DM and DQS inputs changing twice per
clock cycle.
IDD5 tRC=tRC(MIN)
IDD6 CKE ≤ 0.2V
Four bank interleaving Reads (BL=4) with auto
IDD7A
precharge with tRC=tRC (MIN); tCK=tCK(MIN);
Address and control inputs change only
during Active Read or Write commands.
DDR333
@CL=2.5
Max
1000
1360
32
400
240
480
1400
1400
2040
32
3280
DDR266
@CL=2
Max
1000
1280
32
360
200
400
1200
1200
1880
32
2800
DDR266
@CL=2.5
Max
1000
1280
32
360
200
400
1200
1200
1880
32
2800
DDR266
@CL=2
Max
1000
1280
32
360
200
400
1200
1200
1880
32
2800
DDR200
@CL=2
Max
Units
1000 mA
1280 mA
32 mA
360 mA
200 mA
400 mA
1200 mA
1200 mA
1880 mA
32 mA
2800 mA
December 2004
Rev. 6
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
5 Page 
White Electronic Designs
W3EG6432S-D4
PRELIMINARY
ORDERING INFORMATION FOR D4
Part Number
COMMERCIAL
Speed
CAS Latency
tRCD
tRP
Height*
W3EG6432S335D4
166MHz/333Mb/s
2.5
33
31.75 (1.25")
W3EG6432S262D4
133MHz/266Mb/s
2
22
31.75 (1.25")
W3EG6432S263D4
133MHz/266Mb/s
2
33
31.75 (1.25")
W3EG6432S265D4
133MHz/266Mb/s
2.5
33
31.75 (1.25")
W3EG6432S202D4
100MHz/200Mb/s
2
22
31.75 (1.25")
INDUSTRIAL
W3EG6432S335D4I
166MHz/333Mb/s
2.5
33
31.75 (1.25")
W3EG6432S262D4I
133MHz/266Mb/s
2
22
31.75 (1.25")
W3EG6432S263D4I
133MHz/266Mb/s
2
33
31.75 (1.25")
W3EG6432S265D4I
133MHz/266Mb/s
2.5
33
31.75 (1.25")
W3EG6432S202D4I
100MHz/200Mb/s
2
22
31.75 (1.25")
NOTE:
• Consult Factory for availability of lead-free products. (F = Lead-Free, G = RoHS Compliant)
• Product specific part numbers are available for source control if needed, please consult factory for the correct part number if a specific component vendor is preferred.
• Industrial temperature (-40°C to 85°C) options
PACKAGE DIMENSIONS FOR D4
3.98 ± 0.1
(0.157 ± 0.004)
67.56
(2.666) MAX
2.31
(0.091) REF.
11.40
(0.449)
4.19
(0.165)
1.80
(0.071)
47.40
(1.866)
3.81
(0.150) MAX.
31.75
(1.25)
20
(0.787)
3.98
(0.157) MIN.
1.0 ± 0.1
(0.039 ± 0.004)
December 2004
Rev. 6
* ALL DIMENSIONS ARE IN MILIMETERS AND (INCHES)
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet W3EG6432S-D4.PDF ] | |
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