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Número de pieza | IRG4BC40UPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 95428
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40UPbF
UltraFast Speed IGBT
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
C
G
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Min.
------
------
------
------
Typ.
------
0.50
------
2 (0.07)
Max.
0.77
------
80
------
Units
°C/W
g (oz)
1
06/17/04
1 page IRG4BC40UPbF
4000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = C ce + C gc
3000 Cies
2000
Coes
1000 Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 20A
16
12
8
4
0A
0 20 40 60 80 100 120
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.1
VCC = 480V
VGE = 15V
TJ = 25°C
1.0 I C = 20A
0.9
0.8
0.7
0.6
0
A
10 20 30 40 50 60
RG, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
RG = 10Ω
VGE = 15V
VCC = 480V
1
I C = 40A
I C = 20A
IC = 10A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4BC40UPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4BC40UPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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