|
|
Número de pieza | IRFP22N60K | |
Descripción | SMPS MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFP22N60K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 94414A
SMPS MOSFET IRFP22N60K
HEXFET® Power MOSFET
Applications
l Hard Switching Primary or PFS Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
VDSS
600V
RDS(on) typ.
240mΩ
ID
22A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
22
14
88
370
2.9
± 30
18
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
380
22
37
Units
mJ
A
mJ
Max.
0.34
–––
40
Units
°C/W
1
8/26/04
1 page 25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRFP22N60K
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP22N60K.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP22N60K | SMPS MOSFET | International Rectifier |
IRFP22N60K | Power MOSFET ( Transistor ) | Vishay |
IRFP22N60KPBF | HEXFET Power MOSFET | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |