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Teilenummer | EL5211 |
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Beschreibung | (EL5111 - EL5411) 60MHz Rail-to-Rail Input-Output Op Amps | |
Hersteller | Intersil Corporation | |
Logo | ||
Gesamt 19 Seiten Data Sheet
EL5111, EL5211, EL5411
August 27, 2015
FN7119.8
60MHz Rail-to-Rail Input-Output Op Amps
The EL5111, EL5211, and EL5411 are low power, high
voltage rail-to-rail input-output amplifiers. The EL5111
represents a single amplifier, the EL5211 contains two
amplifiers, and the EL5411 contains four amplifiers.
Operating on supplies ranging from 5V to 15V, while
consuming only 2.5mA per amplifier, the EL5111, EL5211,
and EL5411 have a bandwidth of 60MHz (-3dB). They also
provide common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply
voltage.
The EL5111, EL5211, and EL5411 also feature fast slewing
and settling times, as well as a high output drive capability of
65mA (sink and source). These features make these
amplifiers ideal for high speed filtering and signal
conditioning application. Other applications include battery
power, portable devices, and anywhere low power
consumption is important.
The EL5111 is available in 5 Ld TSOT and 8 Ld HMSOP
packages. The EL5211 is available in the 8 Ld HMSOP
package. The EL5411 is available in space-saving 14 Ld
HTSSOP packages. All feature a standard operational
amplifier pinout. These amplifiers operate over a temperature
range of -40°C to +85°C.
Features
• Pb-free plus anneal available (RoHS compliant)
• 60MHz (-3dB) bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier) = 2.5mA
• High slew rate = 75V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• ±180mA output short current
Applications
• TFT-LCD panels
• VCOM amplifiers
• Drivers for A/D converters
• Data acquisition
• Video processing
• Audio processing
• Active filters
• Test equipment
• Battery-powered applications
• Portable equipment
Pinouts
EL5111
(8 LD HMSOP)
TOP VIEW
NC 1
VIN- 2
VIN+ 3
NVOSL-ON4GER
AVAI+L- ABLE
OR
SU87PPONVRSCT+ED
6 VOUT
5 NC
EL5111
(5 LD TSOT)
TOP VIEW
VOUT 1
5 VS+
VS- 2
+-
VIN+ 3
4 VIN-
EL5211
(8 LD HMSOP)
TOP VIEW
VOUTA 1
VINA- 2
VINA+ 3
NOVLSO-NG4ER
-
AV+AILABLE
OR
SUP8POVRTSE+D
7 VOUTB
- 6 VINB-
+
5 VINB+
EL5411
(14 LD HTSSOP)
TOP VIEW
VOUTA 1
VINA- 2
-
VVVIIINNNVNOBASBL+++-ON3456GER++-AVAILABLE
O+- R
+
-
S11U43PPVVOROINTUDETD-D
12 VIND+
11 VS-
10 VINC+
9 VINC-
VOUTB 7
8 VOUTC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas LLC 2004, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL5111, EL5211, EL5411
Typical Performance Curves
500
VS = ±5V
TA = +25°C
400
TYPICAL
PRODUCTION
DISTRIBUTION
300
200
100
0
INPUT OFFSET VOLTAGE (mV)
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
25
VS = ±5V
20
TYPICAL
PRODUCTION
DISTRIBUTION
15
10
5
0
INPUT OFFSET VOLTAGE DRIFT, TCVOS (µV/°C)
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT
2.0
1.5
1.0
0.5
0.0
-0.5
-50 -10 30 70 110 150
TEMPERATURE (°C)
FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE
0.008
VS = ±5V
0.004
0.000
-0.004
-0.008
-0.012
-50 -10 30 70 110 150
TEMPERATURE (°C)
FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE
4.96
4.94
VS = ±5V
IOUT = 5mA
4.92
4.90
4.88
4.86
-50 -10 30 70 110 150
TEMPERATURE (°C)
FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE
-4.85
-4.87
VS = ±5V
IOUT = 5mA
-4.89
-4.91
-4.93
-4.95
-50 -10 30 70 110 150
TEMPERATURE (°C)
FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE
6 FN7119.8
August 27, 2015
6 Page EL5111, EL5211, EL5411
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
PDMAX = iVS ISMAX + VS+ – VOUTi ILOADi
(EQ. 2)
when sourcing, and:
PDMAX = iVS ISMAX + VOUTi – VS- ILOADi
(EQ. 3)
when sinking,
where:
• i = 1 to 2 for dual and 1 to 4 for quad
• VS = Total supply voltage
• ISMAX = Maximum supply current per amplifier
• VOUTi = Maximum output voltage of the application
• ILOADi = Load current
If we set the two PDMAX equations equal to each other, we
can solve for RLOADi to avoid device overheat. Figures 29
through 36 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if PDMAX exceeds the device's power
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figures 29 through 36.
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.9
0.8
694mW
0.7
0.6
HTSSOP14
JA = +144°C/W
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75 85 100
125
AMBIENT TEMPERATURE (°C)
FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD -
HTSSOP EXPOSED DIEPAD SOLDERED TO
PCB PER JESD51-5
3.5
3.0 2.632W
2.5
2.0
HTSSOP14
JA = +38°C/W
1.5
1.0
0.5
0.0
0
25
50
75 85 100
125
AMBIENT TEMPERATURE (°C)
FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.2
TSSOP28
1.0
0.8
0.6 1.042W
977mW
0.4 893mW
845mW
0.2 758mW
0.0
0
25
50
JA = +120°C/W
TSSOP24
JA = +128°C/W
TSSOP20
JA = +140°C/W
TSSOP16
JA = +148°C/W
TSSOP14
JA = +165°C/W
75 85 100 125 150
AMBIENT TEMPERATURE (°C)
FIGURE 31. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.8
TSSOP28
1.6
1.4
JA=+75°C/W
TSSOP24
1.2
1.0 1.667W
JA=+85°C/W
TSSOP20
0.8 1.471W
JA=+90°C/W
0.6 1.389W
TSSOP16
0.4 1.289W
JA=+97°C/W
0.2 1.250W
0.0
TSSOP14
JA=+100°C/W
0 25 50 75 85 100 125 150
AMBIENT TEMPERATURE (°C)
FIGURE 32. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
12 FN7119.8
August 27, 2015
12 Page | ||
Seiten | Gesamt 19 Seiten | |
PDF Download | [ EL5211 Schematic.PDF ] |
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