Datenblatt-pdf.com


CFK2062-P1 Schematic ( PDF Datasheet ) - Mimix Broadband

Teilenummer CFK2062-P1
Beschreibung Power GaAs FET
Hersteller Mimix Broadband
Logo Mimix Broadband Logo 




Gesamt 4 Seiten
CFK2062-P1 Datasheet, Funktion
800-900 MHz
+30 dBm Power GaAs FET
August 2006 - Rev 03-Aug-06
Features
High Gain
+30 dBm Power Output
Proprietary Power FET Process
>40% Linear Power Added Efficiency
Surface Mount SO-8 Power Package
Applications
ISM Band Base Stations and Terminals
Cellular Base Stations and Terminals
Wireless Local Loop
Description
The CFK2062-P1 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+30 dBm. The device is easily matched and provides excellent
CFK2062-P1
Package Diagram
GND G G GND
1234
Back Plane
is Source
8 765
GND D D GND
linearity at 1 Watt. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
Specifications (TA = 25°C) The following specifications are
guaranteed at room temperature in Celeritek test fixture at 850 MHz.
Parameters Conditions
www.DataSheet4U.com Vd = 8V, Id = 400 mA (Quiescent)
P-1 dB
SSG
3rd Order
Products (1)
Efficiency @ P1dB
Vd = 5V, Id = 600 mA (Quiescent)
P-1 dB
SSG
Min Typ Max Units
29.0 30.0 — dBm
18.0 20.0 — dB
— 30 — dBc
— 40 — %
— 29.5 — dBm
— 19.0 — dB
Parameters
gm
Idss
Vp
BVGD
JL (2)
Conditions
Vds = 2.0V, Vgs = 0V
Vds = 2.0V, Vgs = 0V
Vds = 3.0V, Ids = 25 mA
Igd = 2.5 mA
@150°C TCH
Min Typ Max Units
— 650 — mS
— 1.4 — A
— -1.8
Volts
15 17 — Volts
— 12 — °C/W
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
IDS
PT
TCH
TSTG
Rating
10V (3)
-5V
Idss
6W
175°C
-65°C to +175°C
SO-8 Power Package Physical Dimensions
Notes:
1. Sum to two tones with 1 MHz spacing = 25 dBm.
2. See thermal considerations information on page 4.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 12V.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 4
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.





SeitenGesamt 4 Seiten
PDF Download[ CFK2062-P1 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CFK2062-P1Power GaAs FETMimix Broadband
Mimix Broadband
CFK2062-P3Power GaAs FETMimix Broadband
Mimix Broadband
CFK2062-P5Power GaAs FETMimix Broadband
Mimix Broadband

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche