(PDF) RB215T-90 Datasheet - Schottky barrier diode

Número de pieza	RB215T-90
Descripción	Schottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes Schottky barrier diode RB215T-90 RB215T-90 zApplications General rectification (Common cathode dual chip) zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability zConstruction Silicon epitaxial planar zExternal dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 zStructure ① 1.2 1.3 0.8 (1) (2) (3) ROHM : ＴO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (1) Forward current surge peak (60Hz・1cyc) (1) Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 20 100 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward characteristics Reverse characteristics Thermal impedance VF IR θjc - - - - 0.75 V IF=10A - 400 µA VR=90V - 1.75 ℃/W junction to case 1/3 1 page

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PDF RB215T-90 Data sheet ( Hoja de datos )