RB160A30 Datasheet PDF - ROHM Semiconductor
| Part Number | RB160A30 | |
| Description | Schottky barrier diode | |
| Manufacturers | ROHM Semiconductor | |
| Logo |  |
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Diodes
Schottky barrier diode
RB160A30
RB160A30
zApplications
General rectification
zFeatures
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low IR.
4) High ESD.
z Dimensions (Unit : mm)
CATH O D E B AN D
φ0.6±0.1
29±1
3.0±0.2
ROHM : MSR
①②
Manufacture Date
29±1
φ2.5±0.2
zConstruction
Silicon epitaxial planar
z Taping specifications (Unit : mm)
H2 A
BLUE
E
L1
H1
L2
F
BROWN
Symbol
Standard dimension
value(mm)
T-31 52.4±1.5
Ａ
T-32
26.0
+0.4
0
B B T-31 5.0±0.5
T-31 5.0±0.3
C T-31 1.0 max.
C
T-32
D T-31
0
T-32
E T-31 1/2A±1.2
T-32 1/2A±0.4
Ｆ T-31 ±0.7
T-32 0.2 max.
H1 T-31 6.0±0.5
T-32
H2 T-31 5.0±0.5
T-32
D |L1-L2| T-31 1.5 max.
T-32 0.4 max.
＊H1(6mm)：BROWN
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak （t=100µs）
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltagae
Reverse current
ESD break down voltage
VF
IR
ESD
0.33
-
20
Typ.
0.43
9.00
-
Limits
30
30
1
70
150
-55 to +150
Max.
0.48
50
-
Unit
V
µA
kV
Unit
V
V
A
A
℃
℃
Conditions
IF=1.0A
VR=30V
C=100pF,R=1.5kΩ, forward and reverse : 1 time
Rev.B
1/3
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RB160A30 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RB160A30.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| RB160A30 | The function is Schottky barrier diode. ROHM Semiconductor | |
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