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DMP2012SN Schematic ( PDF Datasheet ) - Diodes Incorporated

Teilenummer DMP2012SN
Beschreibung P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Hersteller Diodes Incorporated
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Gesamt 4 Seiten
DMP2012SN Datasheet, Funktion
SPICE MODEL: DMP2012SN
DMP2012SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
A
D
BC
G TOP VIEW S
ED
G
H
K
J
Drain
L
M
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
VDSS
VGSS
ID
IDM
Pd
RθJA
Tj, TSTG
-20
±12
-0.7
-2.8
500
250
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SC-59
Dim Min Max
A 0.30 0.50
B 1.40 1.80
C 2.50 3.00
D 0.85 1.05
E 0.30 0.70
G 1.70 2.10
H 2.70 3.10
J 0.10
K 1.00 1.40
L 0.55 0.70
M 0.10 0.35
α 0°
8°
All Dimensions in mm
Unit
V
V
A
A
mW
°C/W
°C
DS30790 Rev. 2 - 2
1 of 4
www.diodes.com
DMP2012SN
© Diodes Incorporated





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