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PDF DMN2005LP4K Data sheet ( Hoja de datos )

Número de pieza DMN2005LP4K
Descripción N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricantes Diodes Incorporated 
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No Preview Available ! DMN2005LP4K Hoja de datos, Descripción, Manual

SPICE MODEL: DMN2005LP4K
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
Mechanical Data
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.001 grams
ESD protected
S
D
G
TOP VIEW
GH
SIDE VIEW
A
BC
DN L
BOTTOM VIEW
DFN1006H4-3
Dim Min Max Typ
A 0.95 1.075 1.00
B 0.55 0.675 0.60
C 0.45 0.55 0.50
D 0.20 0.30 0.25
G — 0.40 —
H 0 0.05 0.02
K 0.10 0.20 0.15
L 0.20 0.30 0.25
M — — 0.35
N — — 0.40
All Dimensions in mm
K
M
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Pd
Value
20
±10
200
250
200
Thermal Resistance, Junction to Ambient
RθJA
625
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
V
V
mA
mW
°C/W
°C
DS30799 Rev. 2 - 2
1 of 4
www.diodes.com
DMN2005LP4K
© Diodes Incorporated

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