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PDF CEFF634 Data sheet ( Hoja de datos )
| Número de pieza | CEFF634 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEPF634/CEBF634
CEIF634/CEFF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF634
CEBF634
CEIF634
CEFF634
VDSS
250V
250V
250V
250V
RDS(ON)
0.45Ω
0.45Ω
0.45Ω
0.45Ω
ID
8.1A
8.1A
8.1A
8.1A d
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
250
±30
8.1
32
74
0.59
8.1 d
32 d
38
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
62.5
3.3
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2006.July
http://www.cetsemi.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEFF634.PDF ] | |
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