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Número de pieza | CEB80N75 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEB80N75 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP80N75/CEB80N75
CEF80N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP80N75
CEB80N75
CEF80N75
VDSS
75V
75V
75V
RDS(ON)
13mΩ
13mΩ
13mΩ
ID
80A
80A
80A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
D
G
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS 75
VGS ±20
ID 80 80 e
IDM f
320 320 e
200 75
PD 1.3 0.5
EAS
IAS
TJ,Tstg
880
45
-55 to 175
880
45
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Feb
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEB80N75.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEB80N75 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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