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CEI655N Schematic ( PDF Datasheet ) - CET

Teilenummer CEI655N
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
Logo CET Logo 




Gesamt 4 Seiten
CEI655N Datasheet, Funktion
CEP655N/CEB655N
CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP655N
CEB655N
CEI655N
CEF655N
VDSS
150V
150V
150V
150V
RDS(ON)
0.153
0.153
0.153
0.153
ID
15A
15A
15A
15A d
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
DG
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
150
±25
15
60
83
0.56
15 d
60 d
39
0.26
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
62.5
3.8
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.June
http://www.cetsemi.com





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