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PDF FDFMA2P029Z Data sheet ( Hoja de datos )
| Número de pieza | FDFMA2P029Z | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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December 2006
FDFMA2P029Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.1A, 95mΩ
Features
General Description
MOSFET
Max rDS(on) = 95mΩ at VGS = –4.5V, ID = –3.1A
Max rDS(on) = 141mΩ at VGS = –2.5V, ID = –2.5A
Schottky
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with very low on-
state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
RoHS Compliant
Pin 1
A NC D
A1
6C
www.DataSheet4U.com
NC 2
D3
5G
4S
MicroFET 2X2 C G S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.1
-6
1.4
0.7
–55 to +150
20
2
Units
V
V
A
W
°C
V
A
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
°C/W
Device Marking
.P29
Device
FDFMA2P029Z
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDFMA2P029Z Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
10
IDD = -3.1A
8
6
4
VDD = -5V
VDD = -15V
VDD = -10V
1000
Ciss
Coss
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
14
100
f = 1MHz
VGS = 0V
Crss
50
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
20
10 rDS(on) LIMIT
100us
1 1ms
VGS=-4.5V
0.1 SINGLE PULSE
RθJA=173oC/W
TA = 25oC
0.01
0.1
1
10ms
100ms
1s
10s
DC
10 60
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
50
SINGLE PULSE
40
RθJA = 173oC/W
TA=25oC
30
20
10 SINGLE PULSE
0
10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
102
Figure 10. Single Pulse Maximum
Power Dissipation
103
10
TJ = 125oC
1
0.1
TJ = 85oC
0.01
TJ = 25oC
0.001
0
200 400 600
VF, FORWARD VOLTAGE(mV)
800
Figure 11. Schottky Diode Forward Voltage
100
TJ = 125oC
10
1
TJ = 85oC
0.1
0.01
TJ = 25oC
0.001
0
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
30
Figure 12. Schottky Diode Reverse Current
FDFMA2P029Z Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDFMA2P029Z.PDF ] | |
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