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PDF AP30N30W Data sheet ( Hoja de datos )
| Número de pieza | AP30N30W | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP30N30W (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP30N30W
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
Description
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
GD
S
250V
68mΩ
36A
TO-3P
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
250
±30
36
23
144
208
1.7
450
30
-55 to 150
-55 to 150
Max.
Max.
Value
0.6
40
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200916052-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP30N30W.PDF ] | |
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