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AAT8515 Schematic ( PDF Datasheet ) - AAT

Teilenummer AAT8515
Beschreibung P-Channel Power MOSFET
Hersteller AAT
Logo AAT Logo 




Gesamt 6 Seiten
AAT8515 Datasheet, Funktion
General Description
The AAT8515 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
AAT8515
20V P-Channel Power MOSFET
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current1 (max):
-5.4A @ 25°C
• Low On-Resistance:
— 35m@ VGS = -4.5V
— 60m@ VGS = -2.5V
SC70JW-8 Package
Top View
DDDD
8765
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
Symbol
VDS
VGS
ID
IDM
IS
TJ
TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet4U.com
Continuous Drain Current @ TJ = 150°C1
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
1234
SSSG
TA = 25°C
TA = 70°C
Value
-20
±12
±5.4
±4.3
±32
-1.5
-55 to 150
-55 to 150
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
PD
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
TA = 25°C
TA = 70°C
Typ Max
100 120
61 73.5
33 40
1.7
1.0
Units
V
A
°C
°C
Units
°C/W
°C/W
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8515.2005.04.1.0
1






AAT8515 Datasheet, Funktion
AAT8515
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6 8515.2005.04.1.0

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