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PDF AAT7357 Data sheet ( Hoja de datos )
| Número de pieza | AAT7357 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | AAT | |
| Logotipo |  |
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General Description
The AAT7357 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small-outline, J-lead package, performance superi-
or to that normally found in a TSSOP-8 footprint
has been squeezed into the footprint of a
TSOPJW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
AAT7357
20V P-Channel Power MOSFET
Features
• Drain-Source Voltage (max): -20V
• Contiunous Drain Current1 (max) = -5A @ 25°C
• Low On-Resistance:
— 39mΩ @ VGS = -4.5V
— 63mΩ @ VGS = -2.5V
Dual TSOPJW-8 Package
Top View
D1 D1 D2 D2
8765
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
Symbol
VDS
VGS
Description
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet4U.com
ID Continuous Drain Current @ TJ = 150°C1
IDM Pulsed Drain Current2
IS Continuous Source Current (Source-Drain Diode)1
PD Maximum Power Dissipation1
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
1234
S1 G1 S2 G2
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
-20
±12
±5
±4
±12
-1.3
1.6
1.0
-55 to 150
-55 to 150
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
Description
Junction-to-Ambient Steady State, One FET On
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Typ Max
115 140
64 78
60 72
Units
V
A
W
°C
°C
Units
°C/W
°C/W
°C/W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7357.2005.04.1.0
1
1 page  
Ordering Information
Package
TSOPJW-8
Package Information
AAT7357
20V P-Channel Power MOSFET
Marking1
NBXYY
Part Number (Tape and Reel)2
AAT7357ITS-T1
TSOPJW-8
0.325 ± 0.075
0.65 BSC 0.65 BSC 0.65 BSC
3.025 ± 0.075
All dimensions in millimeters.
0.055 ± 0.045
7°
0.04 REF
0.010
2.75 ± 0.25
0.45 ± 0.15
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
7357.2005.04.1.0
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AAT7357.PDF ] | |
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