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PDF A1395 Data sheet ( Hoja de datos )
| Número de pieza | A1395 | |
| Descripción | (A1391 - A1395) Micro Power 3 V Linear Hall Effect Sensors | |
| Fabricantes | Allegro MicroSystems | |
| Logotipo |  |
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A1391, A1392, A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
withTri-State Output and User-Selectable Sleep Mode
Features and Benefits
▪ High-impedance output during sleep mode
▪ Compatible with 2.5 to 3.5 V power supplies
▪ 10 mW power consumption in the active mode
▪ Miniature MLP/DFN package
▪ Ratiometric output scales with the ratiometric supply
reference voltage (VREF pin)
▪ Temperature-stable quiescent output voltage and
sensitivity
▪ Wide ambient temperature range: –20°C to 85°C
▪ ESD protection greater than 3 kV
▪ Solid-state reliability
▪ Preset sensitivity and offset at final test
Package: 6 pin MLP/DFN (suffix EH)
Description
TheA139x family of linear Hall effect sensor integrated circuits
(ICs) provide a voltage output that is directly proportional to
an applied magnetic field. Before amplification, the sensitivity
of typical Hall effect ICs (measured in mV/G) is directly
proportional to the current flowing through the Hall effect
transducer element inside the ICs. In many applications, it
is difficult to achieve sufficient sensitivity levels with a Hall
effect sensor IC without consuming more than 3 mA of current.
The A139x minimize current consumption to less than 25 μA
through the addition of a user-selectable sleep mode. This makes
these devices perfect for battery-operated applications such as:
cellular phones, digital cameras, and portable tools. End users
can control the current consumption of the A139x by applying a
logic level signal to the S¯¯L¯¯E¯¯E¯¯P pin. The outputs of the devices
are not valid (high-impedance mode) during sleep mode. The
high-impedance output feature allows the connection of multiple
A139x Hall effect devices to a single A-to-D converter input.
The quiescent output voltage of these devices is 50 % nominal of
the ratiometric supply reference voltage applied to theVREF pin
of the device. The output voltage of the device is not ratiometric
with respect to the SUPPLY pin.
Approximate scale
Continued on the next page…
Functional Block Diagram
VCC
To all subcircuits
Hall Element
Regulator
RRatio / 2
RRatio / 2
VREF
SLEEP
Amp
Out
Gain
Offset
Programming Logic
Circuit Reference Current
OUT
1391-DS, Rev. 7
GND
1 page  
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
OUTPUT TIMING CHARACTERISTICS1 TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.2
Max.
Units
Power-On Time3
Power-Off Time4
tPON
tPOFF
– 40 60 μs
– 1 – μs
1See figure 1 for explicit timing delays.
2Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
3Power-On Time is the elapsed time after the voltage on the ¯S¯¯L¯¯E¯¯E¯¯P¯ pin exceeds the active mode threshold voltage,VINH, until the time the device output
reaches 90% of its value.
4Power-Off Time is the duration of time between when the signal on the ¯S¯¯L¯¯E¯¯E¯¯P¯ pin switches from HIGH to LOW and when ICC drops to under 100 μA.
During this time period, the output goes into the HIGH impedance state.
MAGNETIC CHARACTERISTICS TA = 25°C
Characteristic
Ratiometry
Ratiometry
Positive Linearity
Negative Linearity
Symmetry
Symbol
VOUTQ(V)
Sens(V)
Lin+
Lin–
Sym
Test Conditions
Min.
–
–
–
–
–
Typ.*
100
100
100
100
100
Max.
–
–
–
–
–
Units
%
%
%
%
%
*Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
Allegro MicroSystems, LLC
5
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
5 Page 
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Device Supply Ratiometry Application Circuit
Figures 2 and 3 present applications where the VCC pin is con-
nected together with the VREF pin of the A139x. Both of these
pins are connected to the battery, Vbat2. In this case, the device
output will be ratiometric with respect to the battery voltage.
The only difference between these two applications is that the
S¯¯L¯¯E¯¯E¯¯P pin in figure 2 is connected to the Vbat2 potential, so the
device is always in the active mode. In figure 3, the S¯¯L¯¯E¯¯E¯¯P pin is
toggled by the microprocessor; therefore, the device is selectively
and periodically toggled between active mode and sleep mode.
In both figures, the device output is connected to the input of an
A-to-D converter. In this configuration, the converter reference
voltage is Vbat1.
It is strongly recommended that an external bypass capacitor be
connected, in close proximity to the A139x device, between the
VCC and GND pins of the device to reduce both external noise
and noise generated by the chopper-stabilization circuits inside of
the A139x.
Vbat1
Cbypass Vbat2
Supply pin
Micro-
processor
I/O
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 2. Application circuit showing sleep mode disabled and output ratiometirc to the
A139x supply.
Vbat1
Cbypass Vbat2
Supply pin
Micro-
processor
I/O
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 3. Application circuit showing microprocessor-controlled sleep mode and output ratiome-
tirc to the A139x supply.
Allegro MicroSystems, LLC
11
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet A1395.PDF ] | |
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