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PDF RMPA2263 Data sheet ( Hoja de datos )
| Número de pieza | RMPA2263 | |
| Descripción | WCDMA Power Amplifier Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RMPA2263 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PRELIMINARY
May 2005
RMPA2263 i-Lo™
WCDMA Power Amplifier Module
1920–1980 MHz
Features
General Description
■ 40% WCDMA efficiency at +28 dBm Pout
The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s
■ 14% WCDMA efficiency (85 mA total current) at +16 dBm
Pout
■ Linear operation in low-power mode up to +19 dBm
■ Low quiescent current (Iccq): 25 mA in low-power mode
■ Meets UMTS/WCDMA performance requirements
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to medium RF output power levels (< +16 dBm), where the
■ Meets HSDPA performance requirements
handset most often operates. A simple two-state Vmode control
■ Single positive-supply operation with low power and shut-
down modes
– 3.4V typical Vcc operation
– Low Vref (2.85V) compatible with advanced handset
chipsets
■ Compact Lead-free compliant LCC package –
(4.0 x 4.0 x 1.5 mm nominal)
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4 x 4 x 1.5 mm LCC package is
pin-compatible and a drop-in replacement for last generation 4 x
4 mm PAMs widely used today, minimizing the design time to
■ Industry standard pinout
apply this performance-enhancing technology. The multi-stage
■ Internally matched to 50 Ohms and DC blocked RF input/
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
output
manufactured using Fairchild RF’s InGaP Heterojunction
Bipolar Transistor (HBT) process.
www.DataSheet4U.com
Device
i-L
o
™
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
OUTPUT
MATCH
9 GND
8 RF OUT
7 GND
6 GND
11 (paddle ground on package bottom)
©2004 Fairchild Semiconductor Corporation
RMPA2263 i-Lo™ Rev. G
1
www.fairchildsemi.com
1 page  
Package Outline
I/O 1 INDICATOR
1
(4.00mm
+.100
–.050
)
SQUARE
2
3
4
5
TOP VIEW
10
9
8
7
6
1.60mm MAX.
.25mm TYP.
FRONT VIEW
3.50mm TYP.
See Detail A
.30mm TYP.
.85mm TYP.
2
11
1
1.08mm
1.84mm
BOTTOM VIEW
3.65mm
.18mm
Signal Descriptions
Pin #
1
2
3
4
5
6
7
8
9
10
11
Signal Name
Vcc1
RF In
GND
Vmode
Vref
GND
GND
RF Out
GND
Vcc2
GND
Description
Supply Voltage to Input Stage
RF Input Signal
Ground
High Power/Low Power Mode Control
Reference Voltage
Ground
Ground
RF Output Signal
Ground
Supply Voltage to Output Stage
Paddle Ground
.40mm
.10mm
.10mm
.40mm
.45mm
DETAIL A. TYP.
i-L
o
™
RMPA2263 i-Lo™ Rev. G
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RMPA2263.PDF ] | |
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