|
|
Teilenummer | RB520S-40 |
|
Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 4 Seiten Diodes
Schottky barrier diode
RB520S-40
zApplications
Rectifying small power
zExternal dimensions (Unit : mm)
RB520S-40
zLand size figure
zFeatures
1) Ultra small power mold type.
(EMD2)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planer
dot (year week factory)
zTaping dimensions (Unit : mm)
www.DataSheet4U.com
zStructure
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Tj
Storage temperature
Tstg
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
VF -
IR -
Reverse current
IR -
IR -
Typ.
-
-
-
-
Empty Pocket
Limits
40
40
200
1
125
-40 to +125
Unit
V
V
mA
A
Max.
0.39
0.55
1
10
Unit Conditions
V IF=10mA
V IF=100mA
µA VR=10V
µA VR=40V
1/3
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB520S-40 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RB520S-40 | Schottky Barrier Diode | MCC |
RB520S-40 | Schottky barrier Diode | JCET |
RB520S-40 | Schottky barrier diode | ROHM Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |