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2SC3199 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O,
Y, G and L, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
IE
Ptot
Tj
Tstg
Value
50
50
5
150
-150
400
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 6 V, IC = 2 mA
Current Gain Group O
Y
G
L
hFE
hFE
hFE
hFE
Collector Base Cutoff Current
at VCB = 50 V
ICBO
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCE(sat)
Transition Frequency
at VCE = 10 V, IC = 1 mA
fT
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
Noise Figure
at VCE = 6 V, IC = 0.1 mA, f = 1 KHz, RG = 10 KΩ
NF
70
120
200
350
-
-
-
80
-
-
- 140 -
- 240 -
- 400 -
- 700 -
- 0.1 µA
- 0.1 µA
0.1 0.25
V
- - MHz
2 3.5 pF
1 10 dB
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7/15/2011