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Teilenummer | RD07MVS2 |
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Beschreibung | Silicon MOSFET Power Transistor | |
Hersteller | Mitsubishi Electric Semiconductor | |
Logo | ||
Gesamt 9 Seiten www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS2 is a MOS FET type transistor
OUTLINE DRAWING
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
This device have an interal monolithic zener
6.0+/-0.15
diode from gate to source for ESD protection.
FEATURES
•High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
•Integrated gate protection diode
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS2
MITSUBISHI ELECTRIC
1/9
17 Jan. 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
19mm
C2 10uF,50V
W 19mm
W
4 .7 kO HM
RRDD0077MMVVSS2 1
175MHz
22pF
L
R F -in
19.5mm 24.5mm 1mm 11.5mm 3mm
6.5mm 28.5mm
3.5mm 11.5mm
5mm 62pF
6 8 O HM
10mm 5mm
62pF RF-out
140pF
100pF
180pF
22pF
16pF
56pF
L: Enameled wire 7Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material- Teflon substrate
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm
W :line width=1.0mm
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
R F -in
C1 C2 10uF,50V
W 19mm
19mm W
4 .7 kO HM
RRDD0077MMVVSS21
520MHz
20pF
L
6.5mm 6.5mm 44.5mm
46mm 9mm 3.5mm 3.5mm
R F -o ut
3 .5 m m
68pF
68pF
37pF 10pF
20pF 6pF 18pF
L: Enameled wire 5Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material- Teflon substrate
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm
W :ine width=1.0mm
RD07MVS2
MITSUBISHI ELECTRIC
6/9
17 Jan. 2006
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ RD07MVS2 Schematic.PDF ] |
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