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Número de pieza | 2N6058 | |
Descripción | (2N6052 - 2N6059) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6052/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
@TC = 25_ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data.
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N6052
2N6058 2N6059
80 100
80 100
5.0
12
20
0.2
150
0.857
– 65 to + 200_ C
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_ C
_C
Symbol
RθJC
Rating
1.17
Unit
_ C/W
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
PNP
2N6052 *
NPN
2N6058
2N6059 *
*Motorola Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
1
1 page PACKAGE DIMENSIONS
2N6052
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B ––– 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N ––– 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
––– 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
––– 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N6058.PDF ] |
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