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Teilenummer | RJP020N06 |
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Beschreibung | Drive Nch MOS FET | |
Hersteller | ROHM Semiconductor | |
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Gesamt 3 Seiten www.DataSheet4U.com
Transistors
2.5V Drive Nch MOS FET
RJP020N06
RJP020N06
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RJP020N06
Taping
T100
1000
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6 1.5
(1)Gate
(2)Drain
(3)Source
(1) (2)
(3)
0.4 0.5
1.5 1.5
3.0
0.4
Abbreviated symbol : LS
0.4
zInner circuit
DRAIN
GATE
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
PD
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
Tch
Tstg
Limits
60
±12
±2.0
±8.0
2.0
8.0
500
2 ∗2
150
−55 to +150
∗1
SOURCE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
mW
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40 40 0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5 ∗
Unit
°C/W
°C/W
1/2
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ RJP020N06 Schematic.PDF ] |
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