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RD30HVF1 Schematic ( PDF Datasheet ) - Mitsubishi Electric

Teilenummer RD30HVF1
Beschreibung Silicon MOSFET Power Transistor
Hersteller Mitsubishi Electric
Logo Mitsubishi Electric Logo 




Gesamt 8 Seiten
RD30HVF1 Datasheet, Funktion
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
1
3
2.8+/-0.3
2
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
4-C1
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
75
2.5
7
175
-40 to +175
2.0
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 130
IGSS Gate to source leak current
VGS=10V, VDS=0V
--
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
Pout Output power
f=175MHz ,VDD=12.5V
30 35
-
ηD Drain efficiency
Pin=1.0W, Idq=0.5A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=30W(PinControl)
No destroy
f=175MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD30HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006






RD30HVF1 Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
f=175MHz Zout
Zo=10
f=135MHz Zout
f=146MHz Zout
f=175MHz Zin
f=135MHz Zin
f=146MHz Zin
Zin , Zout
f
(MHz)
135
146
175
Zin
(ohm)
0.71-j7.67
0.94-j6.46
0.53-j5.34
Zout
(ohm)
1.72-j0.86
2.12-j0.78
1.87-j0.70
Conditions
Po=40W, Vdd=12.5V,Pin=1.0W
Po=38W, Vdd=12.5V,Pin=1.0W
Po=35W, Vdd=12.5V,Pin=1.0W
RD30HVF1
MITSUBISHI ELECTRIC
6/8
10 Jan 2006

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