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What is RD01MUS2?

This electronic component, produced by the manufacturer "Mitsubishi Electric", performs the same function as "Silicon MOSFET Power Transistor".


RD01MUS2 Datasheet PDF - Mitsubishi Electric

Part Number RD01MUS2
Description Silicon MOSFET Power Transistor
Manufacturers Mitsubishi Electric　
Logo Mitsubishi Electric Logo　


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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device have an interal monolithic zener diode
from gate to source for ESD protection.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
LOT No.
1.5+/-0.1
FEATURES
•High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
30 V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch Channel dissipation Tc=25°C
3.6 W
Pin Input Power
Zg=Zl=50Ω
60 mW
ID Drain Current
- 600 mA
Tch Channel Temperature - 150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case 34.5
°C/W
Note 1: Above parameters are guaranteed independently.
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηd
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=7.2V, Pin=30mW
Drain efficiency
f=520MHz,Idq=100mA
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX
- - 50
- -1
1 1.8 3
0.8 1.4
-
50 65
-
UNIT
uA
uA
V
W
%
RD01MUS2
MITSUBISHI ELECTRIC
1/6
17 Jan. 2006

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RD01MUS2 equivalent
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
S11
(mag) (ang)
0.941 -83.9
0.881 -107.9
0.863 -116.7
0.844 -123.9
0.820 -134.4
0.813 -142.3
0.807 -148.3
0.807 -152.7
0.809 -156.9
S21
(mag) (ang)
18.598 128.5
14.425 112.0
12.863 105.7
11.496 100.2
9.351 91.4
7.854 84.1
6.682 77.7
5.797 72.5
5.096 67.0
S12
(mag) (ang)
0.046 36.0
0.052 21.1
0.054 15.3
0.054 10.8
0.054
3.0
0.053
-4.3
0.053
-7.8
0.051 -12.7
0.048 -17.1
S22
(mag) (ang)
0.761 -65.2
0.660 -85.2
0.632 -92.3
0.606 -98.0
0.575 -107.2
0.566 -114.1
0.569 -119.4
0.574 -123.7
0.588 -127.7
500 0.810 -160.0 4.487 62.7 0.047 -20.0 0.604 -131.0
520 0.812 -161.2 4.286 61.0 0.046 -21.0 0.609 -132.4
550 0.813 -163.1 3.996 58.1 0.045 -24.7 0.620 -134.3
600 0.820 -165.6 3.595 54.1 0.041 -25.0 0.637 -137.2
650 0.822 -168.0 3.231 50.4 0.040 -29.2 0.653 -139.7
700 0.831 -170.1 2.944 46.8 0.038 -31.4 0.672 -142.4
750 0.837 -172.1 2.686 43.2 0.035 -33.6 0.686 -144.6
800 0.842 -174.0 2.451 40.0 0.033 -35.2 0.703 -147.1
850 0.847 -176.0 2.255 36.6 0.030 -37.7 0.717 -149.3
900 0.853 -177.9 2.076 33.6 0.027 -37.8 0.731 -151.3
950 0.857 -179.6 1.915 30.7 0.025 -37.4 0.742 -153.6
1000 0.862 178.9 1.769 28.0 0.022 -37.8 0.757 -155.5
1050 0.865 177.2 1.645 25.5 0.020 -37.5 0.766 -157.6
1100 0.870 175.6 1.526 23.2 0.017 -34.9 0.778 -159.3
RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.957 -79.3 18.576 131.4 0.041 40.9 0.740 -59.4
150 0.902 -103.4 14.762 114.9 0.049 24.5 0.642 -78.6
175 0.884 -112.7 13.236 108.3 0.049 17.9 0.615 -85.4
200 0.867 -120.1 11.888 102.6 0.051 13.0 0.592 -91.3
250 0.843 -131.4 9.751 93.5 0.051 6.1 0.559 -100.5
300 0.831 -139.8 8.210 86.0 0.050 -1.5 0.553 -107.6
350 0.824 -146.1 7.005 79.5 0.050 -6.4 0.553 -112.9
400 0.821 -150.9 6.079 74.1 0.048 -11.2 0.559 -117.9
450 0.823 -155.3 5.343 68.6 0.046 -14.5 0.573 -122.0
500 0.824 -158.6 4.726 64.2 0.043 -19.2 0.589 -125.5
520 0.826 -160.0 4.523 62.2 0.044 -19.3 0.594 -127.1
550 0.825 -161.9 4.226 59.6 0.042 -21.9 0.605 -129.0
600 0.829 -164.4 3.792 55.6 0.040 -23.9 0.622 -132.0
650 0.833 -167.2 3.429 51.5 0.037 -27.8 0.639 -134.9
700 0.839 -169.4 3.117 47.7 0.035 -30.5 0.656 -137.8
750 0.843 -171.5 2.837 44.2 0.033 -31.2 0.675 -140.1
800 0.849 -173.6 2.597 41.1 0.030 -34.9 0.691 -143.0
850 0.854 -175.4 2.397 37.6 0.028 -35.3 0.705 -145.2
900 0.858 -177.2 2.196 34.7 0.026 -35.7 0.718 -147.6
950 0.862 -179.0 2.034 31.8 0.022 -37.5 0.732 -149.6
1000 0.869 179.4 1.890 29.0 0.020 -37.4 0.745 -151.9
1050 0.870 177.6 1.745 26.2 0.018 -37.7 0.757 -154.1
1100 0.876 175.9 1.625 23.4 0.017 -33.9 0.770 -156.0
RD01MUS2
MITSUBISHI ELECTRIC
5/6
17 Jan. 2006


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