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PDF APM9430 Data sheet ( Hoja de datos )
| Número de pieza | APM9430 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ANPEC | |
| Logotipo |  |
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APM9430
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/4A, RDS(ON) = 40mΩ(typ.) @ VGS = 4.5V
RDS(ON) = 110mΩ(typ.) @ VGS = 2.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
DD DD
G
Ordering and Marking Information
S SS
N-Channel MOSFET
APM 9430
APM 9430
H a n d lin g C o d e
Temp. Range
Package Code
APM 9430
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
20
±16
4
15
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw
1 page  
APM9430
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
15
10
TJ=150°C
1
TJ=25°C
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V -Source-to-Drain Voltage (V )
SD
60
48
36
24
12
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.2
D= 0.1
0.1 D= 0.05
D= 0.02
0.01
1E-4
1E-3
SINGLE PULSE
0.01 0.1
1
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
10
100
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM9430.PDF ] | |
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