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RD12MVP1 Schematic ( PDF Datasheet ) - Mitsubishi Electric

Teilenummer RD12MVP1
Beschreibung Silicon MOSFET Power Transistor
Hersteller Mitsubishi Electric
Logo Mitsubishi Electric Logo 




Gesamt 7 Seiten
RD12MVP1 Datasheet, Funktion
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage VGS=0V
VGSS
Gate to Source Voltage VDS=0V
ID Drain Current
Pin Input Power
Zg=Zl=50
Pch
Channel Dissipation
Tc=25°C
Tj Junction Temperature
Tstg Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
60
-5 to +20
4.0
1.0
125
+150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
- - 10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
- - 1.0
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8 - 4.4
Pout Output Power
f=175MHz,VDD=7.2V
10 12
-
ηD Drain Efficiency
Pin=0.5W,Idq=1.0A
55 57
-
VDD=9.5V,Po=10W(Pin Control)
VSWRT Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD12MVP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006






RD12MVP1 Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.799 -169.4 5.980 72.2 0.021 -11.2 0.757 -166.6
125 0.813 -170.7 4.690 65.9 0.020 -14.9 0.780 -167.5
150 0.825 -171.3 3.726 60.1 0.019 -17.2 0.785 -168.8
175 0.835 -171.9 3.045 55.9 0.017 -21.5 0.794 -169.3
200 0.846 -172.5 2.569 52.3 0.016 -22.4 0.821 -169.3
225 0.857 -173.4 2.206 48.4 0.015 -21.1 0.846 -169.5
250 0.868 -174.3 1.904 44.3 0.013 -21.2 0.863 -170.4
275 0.877 -174.9 1.648 40.7 0.011 -21.3 0.864 -170.9
300 0.886 -175.3 1.436 38.2 0.010 -19.9 0.864 -171.4
325 0.895 -175.7 1.270 35.8 0.009 -15.8 0.876 -172.0
350 0.900 -176.4 1.141 33.1 0.008 -11.9 0.891 -172.6
375 0.907 -177.3 1.023 30.4 0.007 -7.2 0.906 -173.1
400 0.909 -178.1 0.917 27.7 0.007 1.3 0.915 -173.9
425 0.913 -178.7 0.820 25.8 0.005 20.2 0.908 -174.4
450 0.921 -179.1 0.745 24.6 0.006 27.4 0.910 -174.5
475 0.925 -179.6 0.683 23.0 0.006 36.9 0.921 -175.2
500 0.932 -180.0 0.627 21.2 0.007 50.8 0.933 -175.9
525 0.931 179.2 0.575 19.4 0.007 53.6 0.937 -176.6
550 0.933 178.6 0.529 18.1 0.008 57.3 0.935 -176.8
575 0.937 178.0 0.486 16.6 0.009 67.9 0.931 -177.0
600 0.943 177.7 0.452 16.1 0.010 70.4 0.935 -177.4
625 0.943 177.3 0.422 14.9 0.011 70.9 0.945 -178.0
650 0.946 177.0 0.391 14.0 0.013 73.8 0.948 -178.6
675 0.947 176.6 0.366 12.7 0.013 75.6 0.946 -179.0
700 0.946 175.9 0.341 12.0 0.015 76.9 0.946 -179.3
725 0.951 175.5 0.322 11.3 0.015 75.8 0.945 -179.6
750 0.949 175.0 0.302 10.5 0.016 76.4 0.949 179.9
775 0.951 174.7 0.284 9.6 0.017 77.8 0.952 179.4
800 0.950 174.5 0.269 9.3 0.019 79.0 0.955 179.0
825 0.956 174.3 0.253 9.2 0.020 77.8 0.954 178.9
850 0.956 173.7 0.240 8.7 0.020 78.7 0.950 178.9
875 0.956 173.3 0.228 7.9 0.021 78.7 0.952 178.4
900 0.953 172.8 0.218 7.1 0.023 77.3 0.953 177.9
925 0.948 172.5 0.206 6.6 0.024 76.8 0.958 177.4
950 0.955 172.2 0.196 7.0 0.024 78.3 0.959 177.3
975 0.955 172.0 0.186 7.3 0.025 78.6 0.958 177.4
1000 0.957 171.8 0.178 7.1 0.026 79.1 0.956 177.1
RD12MVP1
MITSUBISHI ELECTRIC
6/7
1st Jun. 2006

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