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RDX100N60 Schematic ( Datenblatt PDF ) - Rohm

Teilenummer RDX100N60
Beschreibung 10V Drive Nch MOS FET
Hersteller Rohm
Logo Rohm Logo 

Gesamt 3 Seiten
		
RDX100N60 Datasheet, Funktion
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Transistors
10V Drive Nch MOS FET
RDX100N60
RDX100N60
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RDX100N60
Bulk
500
zExternal dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1)Gate
(2)Drain
(3)Source
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zInner circuit
1
2
(1) (2)
(3)
1 GATE PROTECTION DIODE
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
Drain current
Continuous
Pulsed
VGSS
ID 1
IDP 2
±30
±10
±40
Source current
(Body diode)
Avalanche current
Avalanche energy
Continuous
Pulsed
IS
ISP
IAS
EAS
2
3
4
10
40
10
230
Total power dissipation (Tc=25°C)
PD 45
Channel temperature
Tch 150
Range of storage temperature
Tstg 55 to +150
1 Limited only by maximum temperature allowed 2 Pw 10µs, Duty cycle 1%
3 L = 4.0mH VDD=90V Rg=25Ω ∗4 L = 4.0mH VDD=90V Rg=25startingTch=25°C
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
(1) Gate
(2) Drain
(3) Source
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.78
Unit
°C/W
1/2


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