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PDF PBSS9110X Data sheet ( Hoja de datos )
| Número de pieza | PBSS9110X | |
| Descripción | PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: PBSS8110X.
1.2 Features
s SOT89 package
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency leading to less heat generation
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial
s Peripheral driver:
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors)
s DC-to-DC conversion
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
open base
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
-
-
-
[1] -
- −100 V
- −1 A
- −3 A
170 320 mΩ
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
Philips Semiconductors
PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.2 0.33
10 0.1
0.05
0.02
0.01
10
006aaa411
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
102
Zth(j-a)
(K / W)
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa410
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14765
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
9. Package outline
PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
4.6
4.4 1.6
1.8 1.4
1.4
2.6
2.4
1
0.53
0.40
1.5
Dimensions in mm
2
3
1.2
3 0.8
0.48
0.35
Fig 16. Package outline SOT89 (SC-62/TO-243)
4.25
3.75
0.44
0.23
04-08-03
10. Packing information
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package Description
Packing quantity
1 000
4 000
PBSS9110X
SOT89 8 mm pitch, 12 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 18.
9397 750 14765
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PBSS9110X.PDF ] | |
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