|
|
PDF PBSS4160V Data sheet ( Hoja de datos )
| Número de pieza | PBSS4160V | |
| Descripción | NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PBSS4160V (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 31 January 2005
Product data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency, reduces heat generation
s Reduces printed-circuit board area required
s Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
s Major application segments:
x Automotive
x Telecom infrastructure
x Industrial
s Power management:
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
t = 1 ms or limited by Tj(max)
IC = 1 A; IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1A
- 2A
200 250 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base
cut-off current
collector-emitter
cut-off current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VCE = 60 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 50 mA
RCEsat equivalent
on-resistance
IC = 1 A; IB = 100 mA
VBEon base-emitter
turn-on voltage
VCE = 5 V; IC = 1 A
td delay time
tr rise time
VCC = 10 V; IC = 0.5 A;
IBon = 25 mA; IBoff = −25 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT transition frequency IC = 50 mA; VCE = 10 V;
f = 100 MHz
Cc collector
capacitance
VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
--
--
Max Unit
100 nA
50 µA
--
100 nA
--
100 nA
250 400 -
[1] 200 350 -
[1] 100 150 -
- 90 110 mV
- 110 140 mV
[1] - 200 250 mV
- 0.95 1.1 V
[1] - 200 250 mΩ
- 0.82 0.9 V
- 11
- 78
- 90
- 340
- 160
- 500
150 220
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
MHz
- 5.5 10 pF
9397 750 14359
Product data sheet
Rev. 02 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
9. Packing information
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
PBSS4160V
SOT666
4 mm pitch, 8 mm tape and reel
Packing quantity
4 000
-115
[1] For further information and the availability of packing methods, see Section 14.
9397 750 14359
Product data sheet
Rev. 02 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS4160V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PBSS4160DPN | NPN/PNP low VCEsat (BISS) transistor | NXP Semiconductors |
| PBSS4160DS | NPN/NPN low VCEsat (BISS) transistor | NXP Semiconductors |
| PBSS4160K | 1 A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
| PBSS4160PAN | NPN/NPN low VCEsat (BISS) transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |