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PDF PBSS4160DS Data sheet ( Hoja de datos )
| Número de pieza | PBSS4160DS | |
| Descripción | NPN/NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Rev. 02 — 27 June 2005
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160DS.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s Dual low power switches (e.g. motors, fans)
s Automotive applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current (DC)
peak collector current
single pulse; tp ≤ 1 ms
collector-emitter saturation IC = 1 A; IB = 100 mA
resistance
-
[1] -
-
[2] -
- 60 V
- 1A
- 2A
200 250 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
Philips Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10 0.02
0.01
006aaa495
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10
0.02
0.01
006aaa496
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160DS_2
Product data sheet
Rev. 02 — 27 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
11. Soldering
PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
0.95
3.30 2.825
3.45
1.95
0.45 0.55
1.60
1.70
3.10
3.20
Dimensions in mm
Fig 16. Reflow soldering footprint
5.30
msc422
solder lands
solder resist
occupied area
solder paste
5.05
1.40
4.30
Dimensions in mm
Fig 17. Wave soldering footprint
0.45 1.45 4.45
MSC423
solder lands
solder resist
occupied area
solder paste
PBSS4160DS_2
Product data sheet
Rev. 02 — 27 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS4160DS.PDF ] | |
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