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PBSS306NX Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS306NX
Beschreibung NPN low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PBSS306NX Datasheet, Funktion
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PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 August 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PX.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
open base
single pulse;
tp 1 ms
IC = 4 A;
IB = 200 mA
-
-
-
[1] -
- 100 V
- 4.5 A
- 9A
40 56 m
[1] Pulse test: tp 300 µs; δ ≤ 0.02.






PBSS306NX Datasheet, Funktion
Philips Semiconductors
PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 80 V; IE = 0 A
VCB = 80 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 5 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 400 mA
IC = 4.5 A; IB = 225 mA
IC = 4 A; IB = 200 mA
VBEsat
VBEon
base-emitter saturation
voltage
base-emitter turn-on
voltage
IC = 1 A; IB = 100 mA
IC = 4 A; IB = 400 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
VCC = 12.5 V; IC = 3 A;
IBon = 0.15 A;
IBoff = 0.15 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min Typ Max Unit
--
100 nA
--
50 µA
--
100 nA
[1] 200 330 -
[1] 150 270 -
[1] 100 175 -
[1] 50 85
-
[1] 40 70
-
[1] -
27 40 mV
[1] -
53 75 mV
[1] - 100 150 mV
[1] - 115 160 mV
[1] - 160 225 mV
[1] - 140 200 mV
[1] - 170 245 mV
[1] -
40 56 m
[1] - 0.81 0.9 V
[1] - 0.94 1.05 V
[1] - 0.78 0.85 V
- 15 -
- 315 -
- 330 -
- 240 -
- 290 -
- 530 -
- 110 -
ns
ns
ns
ns
ns
ns
MHz
- 23 40 pF
PBSS306NX_1
Product data sheet
Rev. 01 — 21 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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PBSS306NX pdf, datenblatt
Philips Semiconductors
12. Mounting
32 mm
PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
32 mm
30 mm
2.5 mm
40
mm 1 mm
2.5 mm
0.5 mm
3.96 mm
3 mm
1 mm
5 mm
1.6 mm
001aaa234
PCB thickness:
FR4 PCB = 1.6 mm
ceramic PCB = 0.635 mm
Fig 18. FR4 PCB, standard footprint;
ceramic PCB, Al2O3, standard
footprint
20
mm
40
mm
2.5 mm
0.5 mm
1 mm
3.96 mm
1.6 mm
001aaa235
PCB thickness = 1.6 mm
5 mm
Fig 19. FR4 PCB, mounting pad for
collector 6 cm2
PBSS306NX_1
Product data sheet
Rev. 01 — 21 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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