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PDF PBSS303NX Data sheet ( Hoja de datos )
| Número de pieza | PBSS303NX | |
| Descripción | NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS303NX
30 V, 5.1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 23 August 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PX.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 4 A;
IB = 200 mA
Min Typ Max
- - 30
- - 5.1
- - 10.2
[1] -
31 44
Unit
V
A
A
mΩ
1 page  
Philips Semiconductors
PBSS303NX
30 V, 5.1 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa558
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50 0.33
0.20
0.10
0.05
0.02
1 0.01
0
006aaa559
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS303NX_1
Product data sheet
Rev. 01 — 23 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
11. Soldering
PBSS303NX
30 V, 5.1 A NPN low VCEsat (BISS) transistor
0.85 0.20
4.60
1.20
1.20
4.75
2.25
2.00
1.90
1.20
1.70
4.85
0.50
1.20
solder lands
solder resist
occupied area
solder paste
1.00
(3x)
32 1
3.70
3.95
0.60 (3x)
0.70 (3x)
Dimensions in mm
Fig 16. Reflow soldering footprint SOT89 (SC-62)
6.60
2.40
2 3.50
msa442
solder lands
solder resist
occupied area
PBSS303NX_1
Product data sheet
7.60
0.50
3 1 1.20
3.00
1.50
0.70
5.30
Dimensions in mm
Not recommended for wave soldering
Fig 17. Wave soldering footprint SOT89 (SC-62)
Rev. 01 — 23 August 2006
transport direction during soldering
MSA423
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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