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PDF PBSS302NZ Data sheet ( Hoja de datos )
| Número de pieza | PBSS302NZ | |
| Descripción | NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 01 — 8 September 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 4 A;
IB = 200 mA
Min Typ Max
- - 20
- - 5.8
- - 11.6
[1] -
30 43
Unit
V
A
A
mΩ
1 page  
Philips Semiconductors
PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa562
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
1 0.01
0
006aaa563
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302NZ_1
Product data sheet
Rev. 01 — 8 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
11. Soldering
1.20
(4 ×)
7.40
PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
7.00
3.85
3.60
3.50
0.30
4
3.90 4.80 7.65
1 23
solder lands
solder paste
5.90
6.15
occupied area
solder resist
1.20 (3 ×)
1.30 (3 ×)
Dimensions in mm
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.90
6.70
sot223_fr
4
4.30 8.10 8.70
1 23
1.90 (2×)
1.10
7.30
transport direction during soldering
solder lands
occupied area
solder resist
Fig 17. Wave soldering footprint SOT223 (SC-73)
Dimensions in mm
sot223_fw
PBSS302NZ_1
Product data sheet
Rev. 01 — 8 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS302NZ.PDF ] | |
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