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Teilenummer | PBSS4240DPN |
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Beschreibung | 40V low VCEsat NPN/PNP transistor | |
Hersteller | NXP Semiconductors | |
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Gesamt 12 Seiten www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4240DPN
40 V low VCEsat NPN/PNP
transistor
Product specification
2003 Feb 20
Philips Semiconductors
40 V low VCEsat NPN/PNP transistor
Product specification
PBSS4240DPN
2
handbook, halfpage
IC
(A)
1.6
1.2
0.8
(1)
(2)
(3)
MHC475
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0.4
0
0 0.4 0.8 1.2 1.6 2
VCE (V)
TR1 (NPN); Tamb = 25 °C.
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5) IB = 18 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
(8) IB = 9 mA.
(9) IB = 6 mA.
(10) IB = 3 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
handbook1, 0ha3lfpage
RCEsat
(Ω)
102
MHC476
10
1
10−1
10−1
1
(1)
(2)
(3)
10 102 103 104
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Feb 20
6
6 Page Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2003 Feb 20
Document order number: 9397 750 10783
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PBSS4240DPN Schematic.PDF ] |
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