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PDF DIM200WHS12-E000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200WHS12-E000 | |
| Descripción | Half Bridge IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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DIM200WHS12-E000
DIM200WHS12-E000
Half Bridge IGBT Module
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5684-1.2 January 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
1.7V
200A
400A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WHS12-E000 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200WHS12-E000
Note: When ordering, please use the complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WHS12-E000
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25°C
350
300
250
200
150
100
50
0
0.0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Collector voltage, Vce - (V)
Fig. 3 Typical output characteristics
4.0
70
Conditions:
Tcase = 125ºC
Rg(on) = 10 ohms
60 Rg(off) = 3.6 ohms
Vcc = 600V
50
40
Eon
30 Eoff
Erec
20
10
0
0 100 200 300 400
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Common emitter
Tcase = 125°C
300
200
100
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector voltage, Vce - (V)
Fig. 4 Typical output characteristics
100
Conditions:
Tcase = 125ºC
90 IC = 200A
Vcc = 600V
80
Eon
Eoff
Erec
70
60
50
40
30
20
10
0
0 4 8 12 16 20 22 28 32 36 40
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DIM200WHS12-E000.PDF ] | |
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