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PDF DIM200PKM33-F000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200PKM33-F000 | |
| Descripción | IGBT Chopper Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM200PKM33-F000
IGBT Chopper Module
DS5465- 1.0 September 2005 (LN24183)
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Isolated AlSiC Base with AlN substrates
• High thermal cycling capability
APPLICATIONS
• Choppers
• Motor Controllers
• Power Supplies
• Traction Auxiliaries
KEY PARAMETERS
VCES
VCE
*
(sat)
(typ)
IC
IC(PK)
(max)
(max)
3300V
2.8V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PKM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the upper
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Fig. 1 Chopper circuit diagram
Order As:
DIM200PKM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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SEMICONDUCTOR
DIM200PKM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Ices Collector cut-off current
VGE = 0V, VCE = VCES
- - 1 mA
VGE = 0V, VCE = VCES, Tcase = 125°C
-
- 15 mA
Ices Gate leakage current
VGE = ±20V, VCE = 0V
- - 1 µA
VGE(TH) Gate threshold voltage
IC = 40mA, VGE = VCE
5.5 6.5 7.0 V
VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A
- 2.8 - V
VGE = 15V, IC = 200A, Tcase = 125°C - 3.6 - V
IF Diode forward current
DC
- - 200 A
IFM Diode maximum forward current
tp = 1ms
VF
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 200A
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 200A, Tcase = 125°C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
- - 400 A
-
2.9
2.9
-
-
V
-
3.0
3.0
-
-
V
- 36 - nF
LM Module inductance – per arm
- - 40 - nH
RINT Internal resistance – per arm
- - 0.5 - mΩ
SCData Short circuit. Isc
Tj = 125°C, V cc = 2500V,
tp ≤ 10µs,
VCE(max) = VCES - L*×di/dt
IEC 60747-9
I1 - 1000 -
I2 - 930 -
A
A
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM200PKM33-F000.PDF ] | |
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