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PDF DIM600BSS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM600BSS12-A000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM600BSS12-A000
DIM600BSS12-A000
Single Switch IGBT Module
Replaces February 2004 version, issue PDS5692-2.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Inverters
I Motor Controllers
DS5692-3.0 June 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
600A
IC(PK)
(max)
1200A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-A000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600BSS12-A000
Note: When ordering, please use the whole part number.
Outline type code: B
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM600BSS12-A000
Test Conditions
I = 600A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 70nH
IF = 500A, VR = 600V,
dIF/dt = 4800A/µs
Min. Typ. Max. Units
- 710 - ns
- 70 - ns
- 70 - mJ
- 190 - ns
- 70 - ns
- 60 - mJ
- 6 - µC
- 80 - µC
- 370 -
A
- 25 - mJ
Test Conditions
IC = 600A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 2.2Ω
L ~ 70nH
I = 500A, V = 600V,
FR
dIF/dt = 4600A/µs
Min. Typ. Max. Units
- 890 - ns
- 100 - ns
- 90 - mJ
- 440 - ns
- 85 - ns
- 90 - mJ
- 125 - µC
- 390 -
A
- 48 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DIM600BSS12-A000.PDF ] | |
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