Datenblatt-pdf.com


DIM600DCM17-A000 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DIM600DCM17-A000
Beschreibung Igbt Chopper Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 11 Seiten
DIM600DCM17-A000 Datasheet, Funktion
www.DataSheet4U.com
DIM600DCM17-A000
Replaces issue March 2002, version DS5491-2.0
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM600DCM17-A000
IGBT Chopper Module
DS5491-3.1 Octtober 2002
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
600A
IC(PK)
(max)
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Choppers
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual, single and bi-directional switch configurations
covering voltages from 600V to 3300V and currents up to 2400A.
The DIM600DCM17-A000 is a 1700V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DCM17-A000
Note: When ordering, please use the whole part number.
5(E1)
6(G1)
7(C1)
1(E1)
3(C1)
2(C2)
4(E2)
Fig. 1 Chopper circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/11






DIM600DCM17-A000 Datasheet, Funktion
www.DataSheet4U.com
DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
T = 125˚C unless stated otherwise
case
Symbol
Parameter
td(off) Turn-off delay time
tf Fall time
E Turn-off energy loss
OFF
td(on) Turn-on delay time
t
r
Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge Diode arm
IGBT arm
Irr Diode reverse recovery current Diode arm
IGBT arm
Erec Diode reverse recovery energy Diode arm
IGBT arm
Test Conditions
I = 600A
C
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 3.3
L ~ 100nH
IF = 600A,
V = 50% V ,
R CES
dIF/dt = 3000A/µs
Min. Typ. Max. Units
- 1500 -
ns
- 170 - ns
- 270 - mJ
- 400 - ns
- 250 - ns
- 350 - mJ
- 650 - µC
- 250 - µC
- 900 -
A
- 400 -
A
- 380 - mJ
- 150 - mJ
6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page







SeitenGesamt 11 Seiten
PDF Download[ DIM600DCM17-A000 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
DIM600DCM17-A000IGBT Chopper ModuleDynex
Dynex
DIM600DCM17-A000Igbt Chopper ModuleDynex Semiconductor
Dynex Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche