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PDF EMF5XV6T5 Data sheet ( Hoja de datos )
| Número de pieza | EMF5XV6T5 | |
| Descripción | Power Management Dual Transistors NPN Silicon Surface Mount Transistors | |
| Fabricantes | ON Semiconductor | |
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EMF5XV6T5
Preferred Devices
Power Management,
Dual Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Q1 (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
Electrostatic Discharge
ESD
HBM Class 1
MM Class B
Q2 (TA = 25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Peak
Collector Current − Continuous
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ESD
−12
−15
−6.0
−1.0 (Note 1)
−0.5
Vdc
Vdc
Vdc
Adc
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient
RqJA
Max
357 (Note 2)
2.9 (Note 2)
350 (Note 2)
Unit
mW
mW/°C
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
500 (Note 2)
mW
4.0 (Note 2) mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
250 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Single pulse 1.0 ms.
2. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
http://onsemi.com
(3) (2) (1)
Q1
R2 R1
(4) (5)
Q2
(6)
6
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
UY M G
G
1
UY = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
EMF5XV6T5
SOT−563 8000/Tape & Reel
(Pb−Free)
EMF5XV6T5G SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
EMF5XV6T5/D
1 page  
EMF5XV6T5
1.2
VCE = 3.0 V
1
0.8
0.6
0.4
−55°C
25°C
TA = 125°C
0.2
0
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 13. Base Emitter Turn−On Voltage vs.
Collector Current
55
50
45
40
35
30
25
20
0
f = 1 MHz
IC = 0 A
TA = 25°C
12345
VEB, EMITTER BASE VOLTAGE
Figure 14. Input Capacitance
6
35
f = 1 MHz
IE = 0 A
30 TA = 25°C
25
20
15
10
0 2 4 6 8 10 12 14
VCB, COLLECTOR BASE VOLTAGE
Figure 15. Output Capacitance
http://onsemi.com
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| PDF Descargar | [ Datasheet EMF5XV6T5.PDF ] | |
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