|
|
PDF ADG1234 Data sheet ( Hoja de datos )
| Número de pieza | ADG1234 | |
| Descripción | (ADG1233 / ADG1234) CMOS Switches | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ADG1234 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Low Capacitance, Triple/Quad SPDT
±15 V/+12 V i CMOS™ Switches
ADG1233/ADG1234
FEATURES
1.5 pF off capacitance
0.5 pC charge injection
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP
Typical power consumption (<0.03 μW)
APPLICATIONS
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG1233 and ADG1234 are monolithic iCMOS analog
switches comprising three independently selectable single-pole,
double throw SPDT switches and four independently selectable
SPDT switches, respectively.
All channels exhibit break-before-make switching action
preventing momentary shorting when switching channels.
An EN input on the ADG1233 and ADG1234 is used to
enable or disable the device. When disabled, all channels are
switched off.
The iCMOS (industrial-CMOS) modular manufacturing process
combines a high voltage complementary metal-oxide semi-
conductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation of
high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lowered power consumption, and reduced
package size.
The ultralow capacitance and charge injection of these multiplexers
make them ideal solutions for data acquisition and sample-and-
hold applications, where low glitch and fast settling are required.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
FUNCTIONAL BLOCK DIAGRAMS
ADG1233
S1A
D1
S1B
S2B
D2
S2A
S3B
D3
S3A
LOGIC
IN1 IN2 IN3 EN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
ADG1234
S1A
D1
S1B
S4A
D4
S4B
S2B
D2
S2A
LOGIC
S3B
D3
S3A
IN1 IN2 IN3 IN4 EN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 2.
Fast switching speed coupled with high signal bandwidth make the
parts suitable for video signal switching. iCMOS construction
ensures ultralow power dissipation, making the parts ideally
suited for portable and battery-powered instruments.
PRODUCT HIGHLIGHTS
1. 1.5 pF off capacitance (±15 V supply).
2. 0.5 pC charge injection.
3. 3 V logic-compatible digital input, VIH = 2.0 V, VIL = 0.8 V.
4. 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.
1 page  
ADG1233/ADG1234
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
Y Version1
+25°C −40°C to +85°C −40°C to +125°C
0 to VDD
300
Unit
V
Ω typ
On Resistance Match Between
Channels (∆RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (Off )
475
5
16
60
±0.02
567
26
625
27
Ω max
Ω typ
Ω max
Ω typ
nA typ
Drain Off Leakage ID (Off )
±0.1 ±0.6
±0.02
±1
nA max
nA typ
Channel On Leakage ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
tTRANSITION
tBBM
tON (EN)
tOFF (EN)
Charge Injection
±0.1
±0.02
±0.2
±0.6
±0.6
±0.001
2
135
170 200
45
150
195 230
45
60 70
−0.3
±1
±1
2.0
0.8
±0.1
230
10
265
75
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns typ
ns min
ns typ
ns typ
pC typ
Off Isolation
−80
dB typ
Channel-to-Channel Crosstalk −85
dB typ
−3 dB Bandwidth
CS (Off )
CD (Off )
CD, CS (On)
600
1.5
1.7
2
2.2
4
4.5
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
Test Conditions/Comments
VS = 0 V to10 V, IS = −1 mA;
see Figure 24
VDD = 10.8 V, VSS = 0 V
VS = 0 V to10 V, IS = −1 mA
VS = 3 V, 6 V, 9 V, IS = −1 mA
VDD = 13.2 V
VS = 1 V/10 V, VD = 10 V/1 V;
see Figure 25
VS = 1 V/10 V, VD = 10 V/1 V;
see Figure 25
VS = VD = 1 V or 10 V, see Figure 26
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 27
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 8 V; see Figure 28
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 29
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 29
VS = 6 V, RS = 0 Ω, CL = 1 nF; see
Figure 30
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 31
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 33
RL = 50 Ω, CL = 5 pF; see Figure 32
f = 1 MHz; VS = 6 V
f = 1 MHz; VS = 6 V
f = 1 MHz; VS = 6 V
f = 1 MHz; VS = 6 V
f = 1 MHz; VS = 6 V
f = 1 MHz; VS = 6 V
Rev. A | Page 5 of 16
5 Page 
130
VDD = 12V
VSS = 0V
80 VBIAS = 1V/10V
30
–20
–70
–120
0
IS (OFF) + –
ID (OFF) + –
IS (OFF) – +
ID (OFF) – +
ID, IS (ON) – –
ID, IS (ON) + +
20 40 60 80
TEMPERATURE (°C)
100 120
Figure 13. Leakage Currents as a Function of Temperature, Single Supply
200
180
160
140
VDD = +15V
VSS = –15V
120
IDD PER CHANNEL
TA = 25°C
100
80
60
40
20
VDD = 12V
VSS = 0V
0
0 2 4 6 8 10 12 14 16
LOGIC, INX (V)
Figure 14. IDD vs. Logic Level
6
TA = 25°C
4
VDD = +15V
VSS = –15V
VDD = +5V
2 VSS = –5V
0 VDD = 12V
VSS = 0V
–2
–4
–6
–15
–10
–5 0 5
VS (V)
10
Figure 15. Charge Injection vs. Source Voltage
15
ADG1233/ADG1234
220
200
180
160
140
120
100
80
60
40
20
0
–40
AOFF BON 12V DS
AOFF BON 15V DS
BOFF AON 12V DS
BOFF AON 15V DS
–20 0
20 40 60 80
TEMPERATURE (°C)
100 120
Figure 16. tTRANSITION vs. Temperature
0
–10
VDD = +15V
VSS = –15V
–20 TA = 25°C
–30
–40
–50
–60
–70
–80
–90
–100
–110
10k
100k
1M 10M
FREQUENCY (Hz)
100M
1G
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
10k
Figure 17. Off Isolation vs. Frequency
VDD = +15V
VSS = –15V
TA = 25°C
SxA – SxB
S1x – S2x
100k
1M 10M
FREQUENCY (Hz)
100M
Figure 18. Crosstalk vs. Frequency
1G
Rev. A | Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ADG1234.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ADG1233 | (ADG1233 / ADG1234) CMOS Switches | Analog Devices |
| ADG1234 | (ADG1233 / ADG1234) CMOS Switches | Analog Devices |
| ADG1236 | Dual SPDT Switch | Analog Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |