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ADG1209 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer ADG1209
Beschreibung (ADG1208 / ADG1209) iCMOS Multiplexers
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 21 Seiten
ADG1209 Datasheet, Funktion
Data Sheet
Low Capacitance, 4-/8-Channel,
±15 V/+12 V iCMOS Multiplexers
ADG1208/ADG1209
FEATURES
<1 pC charge injection over full signal range
1 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
Available in a 16-lead TSSOP, a 16-lead LFCSP, and a
16-lead SOIC
Typical power consumption < 0.03 µW
APPLICATIONS
Audio and video routing
Automatic test equipment
Data-acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG1208 and ADG1209 are monolithic, iCMOS® analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1208 switches one of eight inputs
to a common output as determined by the 3-bit binary address
lines A0, A1, and A2. The ADG1209 switches one of four
differential inputs to a common differential output as determined
by the 2-bit binary address lines A0 and A1. An EN input on
both devices enable or disable the device. When disabled, all
channels are switched off. When on, each channel conducts
equally well in both directions and has an input signal range
that extends to the supplies.
The industrial CMOS (iCMOS) modular manufacturing
process combines high voltage complementary metal-oxide
semiconductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage devices has been able to achieve. Unlike analog
ICs using conventional CMOS processes, iCMOS components
can tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
FUNCTIONAL BLOCK DIAGRAMS
ADG1208
ADG1209
S1 S1A
DA
S4A
D
S1B
DB
S8 S4B
1-OF-8
DECODER
1-OF-4
DECODER
A0 A1 A2 EN
A0 A1 EN
Figure 1.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Figure 2 shows that there is minimum
charge injection over the entire signal range of the device.
iCMOS construction also ensures ultralow power dissipation,
making the devices ideally suited for portable and battery-
powered instruments.
1.0
MUX (SOURCE TO DRAIN)
0.9 TA = 25°C
0.8
0.7
0.6
VDD = +15V
0.5 VSS = –15V
0.4
0.3 VDD = +12V
VSS = 0V
0.2
0.1 VDD = +5V
0 VSS = –5V
–15 –10
–5
0
5 10 15
VS (V)
Figure 2. Source to Drain Charge Injection vs. Source Voltage
Rev. E
Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2006–2016 Analog Devices, Inc. All rights reserved.
Technical Support
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ADG1209 Datasheet, Funktion
ADG1208/ADG1209
Data Sheet
Parameter
POWER REQUIREMENTS
IDD
+25ºC
0.002
IDD 220
VDD
1 Guaranteed by design, not subject to production test.
−40ºC to −40ºC to
+85ºC
+125ºC Unit
1.0
380
5/16.5
µA typ
µA max
µA typ
µA max
V min/max
Test Conditions/Comments
VDD = 13.2 V
Digital inputs = 0 V or VDD
Digital inputs = 5 V
VSS = 0 V, GND = 0 V
Rev. E | Page 6 of 21

6 Page









ADG1209 pdf, datenblatt
ADG1208/ADG1209
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
200
180 TA = 25°C
160
140
VDD = +13.5V
VSS = –13.5V
VDD = +15V
VSS = –15V
120
100 VDD = +16.5V
VSS = –16.5V
80
60
40
20
0
–18 –15 –12 –9 –6 –3 0 3 6 9 12 15 18
SOURCE OR DRAIN VOLTAGE (V)
Figure 9. On Resistance as a Function of VD (VS) for Dual Supply
600
TA = 25°C
500
400
300
200
VDD = +4.5V
VSS = –4.5V
VDD = +5V
VSS = –5V
VDD = +5.5V
VSS = –5.5V
250
VDD = +15V
VSS = –15V
200
TA = +125°C
150 TA = +85°C
TA = +25°C
100
TA = –40°C
50
0
–15
–10 –5
0
5 10
SOURCE OR DRAIN VOLTAGE (V)
15
Figure 12. On Resistance as a Function of VD (VS) for Different Temperatures,
Dual Supply
600
TA = +125°C
VDD = 12V
VSS = 0V
500
TA = +85°C
400
TA = +25°C
300
200 TA = –40°C
100
0
–6 –4 –2 0 2 4
SOURCE OR DRAIN VOLTAGE (V)
6
Figure 10. On Resistance as a Function of VD (VS) for Dual Supply
450
TA = 25°C
400
350
300
VDD = 10.8V
VSS = 0V
VDD = 12V
VSS = 0V
250
VDD = 13.2V
200 VSS = 0V
150
100
50
0
0 2 4 6 8 10 12 14
SOURCE OR DRAIN VOLTAGE (V)
Figure 11. On Resistance as a Function of VD (VS) for Single Supply
100
0
0 2 4 6 8 10 12
SOURCE OR DRAIN VOLTAGE (V)
Figure 13. On Resistance as a Function of VD (VS) for Different Temperatures,
Single Supply
400
VDD = +15V
300
VSS = –15V
VBIAS = +10V/–10V
200
100
0
ID, S (ON) + +
ID (OFF) + –
IS (OFF) + –
–100
–200
ID, S (ON) – –
ID (OFF) – + IS (OFF) – +
–300
–400
0
10 20 30 40 50 60 70 80 90 100 110 120
TEMPERATURE (°C)
Figure 14. ADG1208 Leakage Currents as a Function of Temperature, Dual Supply
Rev. E | Page 12 of 21

12 Page





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