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PBYR235CT Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBYR235CT
Beschreibung Rectifier diodes Schottky barrier
Hersteller NXP Semiconductors
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Gesamt 5 Seiten
PBYR235CT Datasheet, Funktion
www.DataSheet4U.com
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR245CT series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 2 A
VF 0.45V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR245CT series is supplied
in the surface mounting SOT223
package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT223
4
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR2
Tsp 74 ˚C
square wave; δ = 0.5; Tsp 119 ˚C
square wave; δ = 0.5; Tsp 119 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 40
MAX.
40CT
40
45CT
45
40 45
40 45
2
2
6
6.6
1
150
150
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-a
Thermal resistance junction
to ambient
CONDITIONS
pcb mounted, minimum footprint
pcb mounted, pad area as in fig:1
MIN. TYP. MAX. UNIT
- 156 - K/W
- 70 - K/W
July 1998
1 Rev 1.400





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